IPD80R450P7ATMA1

MOSFET

IPB048N15N5LFATMA1

MOSFET

IPZA60R060P7XKSA1

MOSFET HIGH POWER_NEW

IKZ50N65ES5XKSA1

IGBT 晶体管 To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l

IPL60R105P7AUMA1

MOSFET HIGH POWER_NEW

IPZA60R120P7XKSA1

MOSFET HIGH POWER_NEW

IPW60R125CFD7XKSA1

MOSFET HIGH POWER_NEW

IPB60R120P7ATMA1

MOSFET HIGH POWER_NEW

IPW60R170CFD7XKSA1

MOSFET HIGH POWER_NEW

IPDD60R190G7XTMA1

MOSFET HIGH POWER_NEW

IPW80R360P7XKSA1

MOSFET

IPA60R280CFD7XKSA1

MOSFET LOW POWER_NEW

IPL60R365P7AUMA1

MOSFET

IPAN80R450P7XKSA1

MOSFET LOW POWER_NEW

IPA60R280P7XKSA1

MOSFET LOW POWER_NEW

IKA15N65ET6XKSA2

IGBT 晶体管 Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode

IKA10N65ET6XKSA2

IGBT 晶体管 Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode

IPA60R180P7SXKSA1

MOSFET CONSUMER

IPP80R600P7XKSA1

MOSFET

IPA80R600P7XKSA1

MOSFET