BSM50GAL120DN2

IGBT 模块 1200V 50A CHOPPER

BF999E6327HTSA1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Silicon N-Channel MOSFET Triode

BF998E6327HTSA1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-CH 12 V 30 mA

BF 998 E6327

射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-CH 12 V 30 mA

BSM75GD120DLC

IGBT 模块 N-CH 1.2KV 125A

BSM200GA170DLC

IGBT 模块 N-CH 1.7KV 400A

BSM200GA120DN2

IGBT 模块 1200V 200A SINGLE

BSM100GB120DLCK

IGBT 模块 1200V 100A DUAL

BSM10GP120

IGBT 模块 1200V 10A PIM

BUZ30AH3045AATMA1

MOSFET N-Ch 200V 21A D2PAK-2

BUZ30A H3045A

MOSFET N-Ch 200V 21A D2PAK-2

BF2040E6814HTSA1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Silicon N-Channel MOSFET Tetrode 5V

BC 850CW H6327

双极晶体管 - 双极结型晶体管(BJT) AF TRANSISTOR

BSM200GB60DLC

IGBT 模块 600V 200A DUAL

BSM75GAL120DN2

IGBT 模块 1200V 75A CHOPPER

BSC079N10NS G

MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2

BSC130P03LS G

MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P

BSC105N10LSF G

MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2

BSC016N03LSGATMA1

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

BSC016N03LS G

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3