IRFR5305TRPBF

MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC

IRLML6402TRPBF

MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl

IPB180N10S4-02

MOSFET N-Ch 100V 180A D2PAK-6

IPLU300N04S4-R8

MOSFET N-CHANNEL 30/40V

IPB120P04P4L-03

MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2

IPG20N04S4L-08

MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2

IPD50P04P4L-11

MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2

IPT015N10N5ATMA1

MOSFET N-Ch 100V 300A HSOF-8

IPT012N08N5ATMA1

MOSFET N-Ch 80V 300A HSOF-8

IRF7749L2TRPBF

MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC

IRFB3004PBF

MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg

IPW60R040C7XKSA1

MOSFET HIGH POWER_NEW

IPZ60R099C7XKSA1

MOSFET HIGH POWER_NEW

IPB048N15N5ATMA1

MOSFET

IGW75N65H5XKSA1

IGBT 晶体管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e

IKW50N65WR5XKSA1

IGBT 晶体管 The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno

IPA60R120C7XKSA1

MOSFET HIGH POWER_NEW

IKW30N65ES5XKSA1

IGBT 晶体管 TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

IKW30N65WR5XKSA1

IGBT 晶体管 The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno

IHW30N65R5XKSA1

IGBT 晶体管 Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC